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AO7412 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. Standard Product AO7412 is Pb-free (meets ROHS & Sony 259 specifications). AO7412L is a Green Product ordering option. AO7412 and AO7412L are electrically identical.
Features
VDS (V) = 30V ID = 2.1 A (VGS = 10V) RDS(ON) < 90m (VGS = 10V) RDS(ON) < 100m (VGS = 4.5V) RDS(ON) < 160m (VGS = 2.5V)
SC-70-6 (SOT-323) Top View D D G D D S
D
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG
Maximum 30 12 2.1 1.7 10 0.625 0.4 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 175 200 130
Max 200 250 160
Units C/W C/W C/W
Alpha Omega Semiconductor, Ltd.
AO7412
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=2.1A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=1.3A VGS=2.5V, ID=1A gFS VSD IS Forward Transconductance VDS=5V, ID=2.1A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1 10 69 108 78 130 8.5 0.8 1 2.5 226 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 39 29 1.4 3 VGS=4.5V, VDS=15V, ID=2.1A 0.4 1.2 2.8 VGS=5V, VDS=15V, RL=7.1, RGEN=6 IF=2.1A, dI/dt=100A/s 2.1 17.4 2.1 9.1 3.4 4 3 21 3 11 4 1.7 3.6 270 90 130 100 160 1.5 Min 30 1 5 100 1.8 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=2.1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO7412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 10V 12 9 ID (A) ID(A) 6 3 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 VGS=2.5V 4 125C 2 25C 0 0 0.5 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1 3.5 160 1.8 VGS=2.5V Normalized On-Resistance 140 RDS(ON) (m) 120 100 80 60 0 1 2 3 4 5 6 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V VGS=4.5V 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1 2 3 4 5 6 7 8 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C VGS=2.5V ID=1A VGS=10V ID=2.1A ID=1.3A VGS=10V 180 160 ID=2.1A RDS(ON) (m) 140 120 100 80 60 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 25C 3.5V 4V 6V 3V 10
8
6
Alpha Omega Semiconductor, Ltd.
AO7412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 0.5 1.5 2 2.5 3 Qg (nC) Figure 7: Gate-Charge Characteristics 1 3.5 V =15V VDSDS=10V ID=2.2A ID=2.1A Capacitance (pF) 400 350 300 250 200 150 100 50 0 0 10 VDS (Volts) Figure 8: Capacitance Characteristics 5 15 Ciss
100.0 TJ(Max)=150C TA=25C Power (W) ID (Amps) 10.0 RDS(ON) limited 1.0 10s 0.1 0.1 DC 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 1s 100 1ms 10ms 100m
20 16 12 8 4 0 0.1 1 10
TJ(Max)=150C TA=25C
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=250C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Ton T
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.

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